Gallium arsenide can be made semi-insulating and photorefractive through use of the stoichiometry-related EL2 center (Klein, 1984) or by doping with chromium (GaAs:Cr) (Glass et al., 1984). The growth technology for GaAs is arguably the most advanced of all the compound semiconductors; however, photorefractive quality can vary considerably ...

Results of experimental studies of the effect of electromagnetic radiation over a broad spectral range and high-energy charged particles on gallium arsenide structures with deep centers are presented. It is shown that it is possible to create highly sensitive radiation-stable detectors for different forms of radiation on the basis of the structures studied.

In a novel approach to "thresholdless" lasers, we have developed a new growth technique for self-assembled deep centers in the technologically important semiconductor gallium-arsenide. Here we demonstrate the first gallium-arsenide deep-center laser. These lasers, which intentionally utilize gallium-arsenide deep-center transitions, exhibit a threshold of less than 2 A/cm2 in continuous ...

The paper deals with the effects of the bombarding-electron energy on the velocity of E4 center (E c – 0.76 eV) formation and the temperature dependences of the efficiency of the latter in a neutral volume and the space-charge region of n–type gallium arsenide. The specimens were Schottky diodes manufactured by depositing titanium onto epitaxial layers of n-GaAs with n = (2–4)·1015 cm3 ...

Gallium is not produced in the United States, and demand is satisfied by imports, primarily high-purity material from France and low-purity material from Kazakhstan and Russia. More than 95% of gallium consumed in the United States is in the form of gallium arsenide (GaAs). Analog integrated circuits are the largest application for gallium, with optoelectronic devices

Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure.. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows.. GaAs is often used as a substrate material for the epitaxial ...

MODELS FOR MID-GAP CENTERS IN GALLIUM ARSENIDE 247 There seems to be a consensus that, while the hydrogenic model is able to explain the general characteristicsof shallowimpurities (such as Ge, or Se, shallow donors in GaAs, for example), it does have some shortcomings. There is a significant discrepancy in some cases between experimental and ...

Table 20: World Historic Review for Gallium Arsenide by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis

Deep centers in gallium arsenide associated with intrinsic structural defects. B. I. Boltaks 1, M. N. Kolotov 1 & E. A. Skoryatina 1 Soviet Physics Journal volume 26, pages 919–927 (1983)Cite this article

12%Deep centers in gallium arsenide associated with intrinsic structural defects. B. I. Boltaks 1, M. N. Kolotov 1 & E. A. Skoryatina 1 Soviet Physics Journal volume 26, pages 919–927 (1983)Cite this article

RF Components – Gallium Arsenide and Gallium Nitride Foundry Technologies, Prototypes and Products To Revolutionize Customers' Future Missions The facility is a leader in producing gallium nitride components, which emit five times the radio frequency power of previous technologies – a property that could result in lighter, more powerful ...

The local and band methods for calculating the electronic structure of deep centers are reviewed. An analysis is then made of experimental results concerning impurity atoms of titanium, vanadium, chromium, manganese, iron, cobalt, and nickel in gallium arsenide.

These results suggest that the most toxic component of gallium arsenide was the arsenic that dissociated from the gallium arsenide after the latter entered the rat's body. Report #3 (Yamauchi et al. 1986) Yamauchi et al. (1986) found gallium arsenide to be soluble in phosphate buffers of various ionic strengths as did Webb et al. (1984, 1986).

4. CONCLUSION. The features of the ESR of interacting Mn centers in. gallium arsenide show that the ESR spectrum at low. temperatures originates from the interstitial manganese. ions Mn int. The ...

A technique has been developed for determining the properties of deep centers in conducting, n-type gallium arsenide. A Schottky barrier is produced at the surface by means of a blocking contact of gold or electrolyte. A reverse bias is applied and the ionization of deep centers in the dark causes the barrier capacitance to change with time.

12%Results of experimental studies of the effect of electromagnetic radiation over a broad spectral range and high-energy charged particles on gallium arsenide structures with deep centers are presented. It is shown that it is possible to create highly sensitive radiation-stable detectors for different forms of radiation on the basis of the structures studied.